Lighting the Way to Graphene-based Devices

Berkeley Lab Researchers Use Light to Dope Graphene Boron Nitride Heterostructures

Graphene continues to reign as the next potential superstar material for the electronics industry, a slimmer, stronger and  much faster electron conductor than silicon. With no natural energy band-gap, however, graphene’s superfast conductance can’t be switched off, a serious drawback for transistors and other electronic devices. Various techniques have been deployed to overcome this problem with one of the most promising being the integration of ultrathin layers of graphene and boron nitride into two-dimensional heterostructures. As conductors, these bilayered hybrids are almost as fast as pure graphene, plus they are well-suited for making devices. However, tailoring the electronic properties of graphene boron nitride (GBN) heterostructures has been a tricky affair, involving chemical doping or electrostatic-gating – until now. Read more…

Bilayer Graphene Works as an Insulator

A research team led by physicists at the University of California, Riverside has identified a property of “bilayer graphene” (BLG) that the researchers say is analogous to finding the Higgs boson in particle physics.

Graphene, nature’s thinnest , is a one-atom thick sheet of arranged in a . Because of graphene’s planar and chicken wire-like structure, sheets of it lend themselves well to stacking.

BLG is formed when two graphene sheets are stacked in a special manner. Like graphene, BLG has high current-carrying capacity, also known as high electron . The high current-carrying capacity results from the extremely high velocities that electrons can acquire in a .

Read more at: http://phys.org/news/2012-01-bilayer-graphene-insulator.html